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MMBTSA1235
PNP Silicon Epitaxial Planar Transistor
for low frequency amplification applications
The transistor is subdivided into two groups E and F, according to its DC current gain.
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SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 6 V, -IC = 1 mA Current Gain Group at -VCE = 6 V, -IC = 0.
MMBTSA1235 Datasheet
