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MMBTSA1365
PNP Silicon Epitaxial Planar Transistor
for high current drive application The transistor is subdivided into three groups E, F and G according to its DC current gain.
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SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO -IC -ICM Ptot Tj TS
Value 25 20 4 700 1 200 150 - 55 to + 150
Unit V V V mA A mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter DC Current Gain at -VCE = 4 V, -IC = 100 mA E F G Symbol hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) fT Min. 150 250 400 25 20 4 Typ. 180 Max. 300 500 800 1 1 0.
MMBTSA1365 Datasheet
