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MMBTSC1815
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended.
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SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C)
O
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Tamb=25 OC Parameter DC Current Gain at VCE=6V, IC=2mA Current Gain Group
Symbol VCBO VCEO VEBO IC IB Ptot Tj TS
Value 60 50 5 150 50 200 150 -55 to +150
Unit V V V mA mA mW
O
C C
O
Symbol
Min.
Typ.
Max.
MMBTSC1815 Datasheet
