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SDS160EWT Datasheet SILICON EPITAXIAL PLANAR SWITCHING DIODE

Manufacturer: SEMTECH

Overview: www.DataSheet4U.com SDS160EWT SILICON EPITAXIAL PLANAR SWITCHING DIODE for ultra high speed switching application PINNING PIN 1.

General Description

Cathode Anode 2 A Top View Marking Code: "A" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Forward Current Peak Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Symbol VRM VR IO IFM IFSM PD TJ Tstg Value 85 80 100 300 2 150 150 - 55 to + 150 Unit V V mA mA A mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 80 V Total Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100 Ω Symbol VF IR CT trr Max.

1.2 0.5 3 4 Unit V µA pF ns SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009 www.DataSheet4U.com SDS160EWT SEMTECH ELECTRONICS LTD.

Key Features

  • Fast reverse recovery time.
  • Small total capacitance.
  • Low forward voltage.