ST2N4400 Datasheet | SEMTECH

ST 2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40 V Collector Dissipation: PC (max) = 625 m W On special request, these transistors can be manufactured in different pin configurations. .. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 60 40 6 600 625 150 -55 to +150 Unit V V V m A m W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 02/12/2005 ST 2N4400 / 2N4401 Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE=1V, IC=0.1m A at VCE=1V, IC=1m A at VCE=1V, IC=10m A at VCE=1V, IC=150m A at VCE=2V, IC=500m A Collector Cutoff Current at VCB=35V Emitter Cutoff Current at VEB=5V Collector Emitter Breakdown Voltage at IC=1m A Collector Base Breakdown Voltage at IC=100µA Emitter Base Breakdown Voltage at IE=100µA Collector Emitter Saturation Voltage at IC=150m A, IB=15m A at IC=500m A, IB=50m A Collector Saturation Voltage at IC=150m A, IB=15m A at IC=500m A, IB=50m A Gain Bandwidth Product at VCE=10V, IC=20m A, f=100MHz Collector Base Capacitance at VCB=5V, f=100MHz Turn On Time at VCC=30V, VBE=2V, IC=150m A, IB1=15m A Turn Off Time at VCC=30V, IC=150m A, IB1=IB2=15m A ST 2N4400 ST 2N4401 ST 2N4401 ST 2N4400 ST 2N4401 ST 2N4400 ST 2N4401 ST 2N4400 ST 2N4401 ST 2N4400 ST 2N4401 Symbol h FE h FE h FE h FE h FE h FE h FE h FE h FE ICBO IEBO V(BR)CEO V(BR)CBO V(BR)EBO Min. 20 20 40 40 58 50 100 20 40 40 60 6 Max... Unit 150 300 100 100 n A n A V V V VCEsat VCEsat VBEsat VBEsat f T f T CCBO ton toff 0.75 200 250 - 0.4 0.75 0.95 1.2 6.5 35 255 V V V V MHz MHz p F ns ns - SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the...