ST2N6517 Datasheet | SEMTECH

ST 2N6517 .. NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 o C) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS Value 350 350 6 500 625 150 -55 to +150 Unit V V V m A m W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2N6517 Characteristics at Tamb=25 o C Symbol DC Current Gain at VCE=10V, IC=1m A at VCE=10V, IC=10m A at VCE=10V, IC=30m A at VCE=10V, IC=50m A at VCE=10V, IC=100m A Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage at IC=1m A Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=250V Emitter Cutoff Current at VEB=5V Collector Base Capacitance at VCB=20V, f=1MHz Base Emitter Saturation Voltage at IC=10m A, IB=1m A at IC=20m A, IB=2m A at IC=30m A, IB=3m A Collector Emitter Saturation Voltage at IC=10m A, IB=1m A at IC=20m A, IB=2m A at IC=30m A, IB=3m A at IC=50m A, IB=5m A Base Emitter On Voltage at VCE=10V, IC=100m A Current Gain Bandwidth Product at VCE=20V, IC=10m A, f=20MHz f T 40 200 MHz VBE(on) 2 V VCE(sat) VCE(sat) VCE(sat) VCE(sat) 0.3 0.35 0.5 1 V V V V VBE(sat) VBE(sat) VBE(sat) 0.75 0.85 0.9 V V V Ccb 6 p F IEBO 50 n A ICBO 50 n A BVEBO 6 V BVCEO 350 V BVCBO 350 V h FE h FE h FE h FE h FE 20 30 30 20 15 200 200 Min. Typ. .. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated :...