• Part: ST2SC640
  • Description: NPN Silicon Epitaxial Planar Transistor
  • Category: Transistor
  • Manufacturer: SEMTECH
  • Size: 168.82 KB
Download ST2SC640 Datasheet PDF
SEMTECH
ST2SC640
ST2SC640 is NPN Silicon Epitaxial Planar Transistor manufactured by SEMTECH.
ST 2SC640 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As plementary type the PNP transistor ST 2SA733 is remended. On special request, these transistors can be manufactured in different pin configurations. .. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS Value 40 30 5 100 150 150 -55 to +150 Unit V V V m A m W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/05/2003 ST 2SC640 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1m A 1) .. Min. Typ. Max. Unit Current Gain Group R O Y P L Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage at IC=10m A Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100m A, IB=10m A Gain Bandwidth Product at VCE=6V, IC=10m A Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=0.5m A at f=1KHz, RS=500Ω h FE h FE h FE h FE h FE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) f T COB 40 70 120 200 350 40 30 5 - 0.15 300 2.5 80 140 240 400 700 0.1 0.1 0.3 - V V V μA μA V MHz p F - 4 - d B SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated :...