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ST2SD1303 - NPN Silicon Epitaxial Planar Transistor

Key Features

  • ․High emitter-base voltage VEBO=7.5V(min).
  • ․High reverse hFE ․Low on resistance reverse hFE=20(min) (VCE=2V, IC=4mA) Ron=0.6Ω (Typ. ) (IB=1mA) TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 25 16 7.5.
  • 300 30 400 125 -55 to +125 Unit V V V mA mA m.

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Datasheet Details

Part number ST2SD1303
Manufacturer SEMTECH
File Size 272.80 KB
Description NPN Silicon Epitaxial Planar Transistor
Datasheet download datasheet ST2SD1303 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ST 2SD1303 NPN Silicon Epitaxial Planar Transistor for audio muting application. On special request, these transistors can be manufactured in different pin configurations. Features ․High emitter-base voltage VEBO=7.5V(min)* ․High reverse hFE ․Low on resistance reverse hFE=20(min) (VCE=2V, IC=4mA) Ron=0.6Ω (Typ.) (IB=1mA) TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 25 16 7.5* 300 30 400 125 -55 to +125 Unit V V V mA mA mW O O C C www.DataSheet4U.com SEMTECH ELECTRONICS LTD.