Datasheet4U Logo Datasheet4U.com

1N4448WS Datasheet Silicon Epitaxial Planar Diode

Manufacturer: SEMTECH

Overview: 1N4448WS SILICON EPITAXIAL PLANAR DIODE Fast Switching Diode Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Output Current Forward Continuous Current.

Datasheet Details

Part number 1N4448WS
Manufacturer SEMTECH
File Size 425.90 KB
Description SILICON EPITAXIAL PLANAR DIODE
Datasheet 1N4448WS-SEMTECH.pdf

General Description

Cathode Anode 12 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Symbol VRM VR IO IFM IFSM Pd Tj Tstg Value 100 80 150 300 0.5 200 150 - 65 to + 150 Unit V V mA mA A mW OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 5 mA at IF = 10 mA at IF = 100 mA at IF = 150 mA Reverse Leakage Current at VR = 80 V at VR = 20 V at VR = 75 V, TJ = 150 OC at VR = 25 V, TJ = 150 OC Reverse Breakdown Voltage at IR = 100 µA Capacitance at VR = 0.5 V, f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 Ω Symbol VF IR V(BR)R Ctot trr Min.

0.62 - - 80 - - Max.

0.72 0.855 1 1.25 100 25 50 30 - 4 4 Unit V nA nA µA µA V pF ns SEMTECH ELECTRONICS LTD.

1N4448WS Distributor