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1N4448WS - SILICON EPITAXIAL PLANAR DIODE

General Description

Cathode Anode 12 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Symbol VRM VR IO IFM IFSM Pd Tj Tstg Value 100 80 150 300 0.5 200 150 - 65 to + 150 Unit V V mA mA A mW OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 5 mA at IF = 10 mA at IF = 100 mA

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Datasheet Details

Part number 1N4448WS
Manufacturer SEMTECH
File Size 425.90 KB
Description SILICON EPITAXIAL PLANAR DIODE
Datasheet download datasheet 1N4448WS Datasheet

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1N4448WS SILICON EPITAXIAL PLANAR DIODE Fast Switching Diode Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Output Current Forward Continuous Current Non-Repetitive Peak Forward Surge Current (at t = 1 µs) Power Dissipation Junction Temperature Storage Temperature Range PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Symbol VRM VR IO IFM IFSM Pd Tj Tstg Value 100 80 150 300 0.