Semtech Corporation 1N916
HIGH CONDUCTANCE FAST DIODES
| Part No. | 1N916 |
|---|---|
| Datasheet | 1N916 Download |
| Manufacturer |  Semtech Corporation |
| Description | HIGH CONDUCTANCE FAST DIODES |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(T a = 25oC) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current Peak Forward Surge Current Pulse width = 1 second Pulse width = 1 microsecond Total Device Dissipation Derate above 25oC Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range Symbol WIV IO IF if if(surge) if(surge) PD RθJA Tj TS Value 75 200 300 400 1 4 500 3.33 300 175 -65 to +200 Unit V mA mA mA A A mW mW/oC oC/W OC OC РАДИОТЕХ Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: ® 1N916, 1N916A, 1N916B Characteristics at TA = 25oC Symbol Min. Typ. Max. Unit Breakdown Voltage at IR = 100µA at IR = 5µA BV 100 BV 75 - -V -V Reverse Current at VR = 20V at VR = 20V, TA = 150oC at VR = 75V IR IR IR - - 25 nA - 50 µA - 5 µA Forward Voltage at IF = 5mA at IF = 10mA at IF = 20mA at IF = 30mA Dio
