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1SS176
Silicon Epitaxial Planar Switching Diode
Applications • High-speed switching
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Reverse Voltage Peak Reverse Voltage Average Rectified Forward Current Forward Voltage Surge Forward Current at t = 1s Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 100 mA Reverse Current at VR = 30 V Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = 100 mA, VR = 6 V, RL = 100 Ω
Max. 0.45
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No.
XXX Max. 2.9
Min. 27.5
Glass Case DO-34 Dimensions in mm
Symbol
Value
Unit
VR
30
V
VRM
35
V
IF(AV)
100
mA
IF
300
mA
IFSM
1
A
Tj
175
OC
Tstg
- 65 to + 175
OC
Symbol
Max.
Unit
VF
1.2
V
IR
0.
1SS176 Datasheet
