Datasheet4U Logo Datasheet4U.com

1SS511WS - Switching Diode

Datasheet Summary

Description

Cathode Anode 12 WI Top View Marking Code: "WI" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (T j = 25OC) Parameter Reverse Voltage Peak Reverse Voltage Average Forward Current Peak Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature R

Features

  • Ultra high speed switching.

📥 Download Datasheet

Datasheet preview – 1SS511WS

Datasheet Details

Part number 1SS511WS
Manufacturer SEMTECH
File Size 197.19 KB
Description Switching Diode
Datasheet download datasheet 1SS511WS Datasheet
Additional preview pages of the 1SS511WS datasheet.

📁 Similar Datasheet

  • 1SS511WS - Silicon Diode (BLUE ROCKET ELECTRONICS)
  • 1SS101 - SUPER HIGH SPEED SWITCHING DIODE (XIN SEMICONDUCTOR)
  • 1SS101 - Mixer Diode (NEC)
  • 1SS104 - SILICON DIODE (Toshiba Semiconductor)
  • 1SS106 - Silicon Schottky Barrier Diode (Renesas)
  • 1SS106 - SMALL SIGNAL SCHOTTKY DIODES (JINAN JINGHENG ELECTRONICS)
  • 1SS106 - SCHOTTKY BARRIER RECTIFIER DIODES (Sunmate)
  • 1SS106 - Silicon Schottky Barrier Diode (Hitachi)
  • 1SS106 - SCHOTTKY BARRIER DIODES (EIC)
  • 1SS108 - Silicon Schottky Barrier Diode (Hitachi Semiconductor)
Other Datasheets by SEMTECH
  • 1SS106 - SILICON SCHOTTKY BARRIER DIODE
  • 1SS176 - SILICON EPITAXIAL PLANAR DIODE
  • 1SS181 - SILICON EPITAXIAL PLANAR DIODE
  • 1SS184 - SILICON EPITAXIAL PLANAR DIODE
  • 1SS187 - SILICON EPITAXIAL PLANAR DIODE
  • 1SS196 - SILICON EPITAXIAL PLANAR DIODE
  • 1SS226 - SILICON EPITAXIAL PLANAR DIODE
  • 1SS270A - SILICON EPITAXIAL PLANAR H IGH SPEED SWITCHING DIODE

Full PDF Text Transcription

Click to expand full text
1SS511WS Switching Diode Features • Ultra high speed switching application • Low forward voltage • Fast reverse recovery time • Small total capacitance PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 WI Top View Marking Code: "WI" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (T j = 25OC) Parameter Reverse Voltage Peak Reverse Voltage Average Forward Current Peak Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Symbol VR VRM IO IFM IFSM Ptot TJ Ts Value 80 85 100 300 2 150 150 -55 to +150 Unit V V mA mA A mW OC OC Characteristics at T j = 25OC Parameter Test Conditions Forward Voltage IF = 1mA IF = 10mA IF = 100mA Reverse Current VR = 80V Total Capacitance Reverse Recovery Time VR = 0V, f = 1MHZ IF = 10mA S
Published: |