Semtech Corporation 2SA1268
PNP Silicon Transistor
ABSOLUTE MAXIMUM RATINGS
(T a = 25? ) Symbol Value 120 120 5 100 100 300 125 -55 to +125 Unit V V V mA mA mW O O Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range -VCBO -VCEO -VEBO -IC IE Ptot Tj TS C C G S P FORM A IS AVAILABLE РАДИОТЕХ-ТРЕЙД ® Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: Free Datasheet ST 2SA1268 Characteristics at Tamb=25 OC Symbol DC Current Gain at -VCE=6V, -IC=2mA Current Gain Group G L Collector Emitter Breakdown Voltage at -IC=1mA Gain Bandwidth Product at -VCE=6V, -IC=1mA Noise Figure at -VCE=6V, -IC=0.1mA, RG=10kΩ, f=10Hz Output Capacitance at -VCB=10V, f=1MHz Base Emitter Voltage at -VCE=6V,-IC=2mA Collector Cutoff Current at -VCB=120V Emitter Cutoff Current at -VEB=5V Collector Saturation Voltage at -IC=10mA, -IB=1mA -VCE(sat) 0.3 V -IEBO 0.1 µA -ICBO 0.1 µA -VBE 0.65 V COB 4 pF NF 6 dB fT 100 MHz -V(BR)CEO 120 V hFE hFE 200 350 400 700 Min.