Semtech Corporation 2SC1675
NPN Transistor
| Part No. | 2SC1675 |
|---|---|
| Datasheet | 2SC1675 Download |
| Manufacturer |  Semtech Corporation |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
: Collector-Base Voltage: VCEO=30V High Current Gain Bandwidth Product: fT=300MHz (TYP.) Low Collector Capacitance: COB=2.0pF (TYP.) Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 Plastic Package Weight approx. 0.19gABSOLUTE MAXIMUM RATINGS
(T a = 25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 50 30 5 50 250 150 -55 to +150 G S P FORM A IS AVAILABLE Unit V V V mA mW ? ? РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: ® ST 2SC1675 Characteristics at Ta=25 OC DC Current Gain at VCE=6V, IC=1mA Symbol Min. R hFE 40 O hFE 70 Y hFE 120 Collector-Emitter Saturation Voltage at IC=10mA, IB=1mA Base–Emitter On Voltage at VCE=6V, IC=1mA Collector-Base Breakdown Voltage at IC=10µA, IE=0 Collector-Emitter Breakdown Voltage at IC=5mA, IB=0 Emitter-Base Breakdown Voltage a...
