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2SC1675 - NPN Transistor

Key Features

  • Collector-Base Voltage: VCEO=30V High Current Gain Bandwidth Product: fT=300MHz (TYP. ) Low Collector Capacitance: COB=2.0pF (TYP. ) Suffix ā€œ-Cā€ means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 50 30 5 50 250.

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Datasheet Details

Part number 2SC1675
Manufacturer SEMTECH
File Size 474.07 KB
Description NPN Transistor
Datasheet download datasheet 2SC1675 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ST 2SC1675 NPN Silicon Epitaxial Planar Transistor FM/AM RF AMP, MIX, CONV, OSC, IF The transistor is subdivided into three groups, R, O, Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. FEATURES: Collector-Base Voltage: VCEO=30V High Current Gain Bandwidth Product: fT=300MHz (TYP.) Low Collector Capacitance: COB=2.0pF (TYP.) Suffix ā€œ-Cā€ means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 Plastic Package Weight approx. 0.