Semtech Corporation 2SC2001
NPN Silicon Epitaxial Planar Transistor
ABSOLUTE MAXIMUM RATINGS
(T a = 25 oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS G S P FORM A IS AVAILABLE Value 30 25 5 700 600 150 -55 to +150 Unit V V V mA mW OC OC РАДИОТЕХ Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: ® ST 2SC2001 Characteristics at Tamb=25 oC DC Current Gain at VCE=1V, IC=100mA Current Gain Group O Y G at VCE=1V, IC=700mA Collector Base Breakdown Voltage at IC=10µA Base Emitter Voltage at IC=10mA, VCE=6V Emitter Cutoff Current at