Semtech Corporation 2SC2240
NPN Silicon Epitaxial Planar Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 120 120 5 100 20 625 150 - 55 to + 150 Unit V V V mA mA mW OC OC Characteristics at Ta = 25 OC Parameter Symbol DC Current Gain at VCE = 6 V, IC = 2 mA Current Gain Group G L hFE hFE Collector Base Cutoff Current at VCB = 120 V ICBO Emitter Base Cutoff Current at VEB = 5 V IEBO Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1