Semtech Corporation 2SC2784
NPN Silicon Epitaxial Planar Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS Value 120 120 5 50 10 300 150 -55 to +150 Unit V V V mA mA mW OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC2784 Characteristics at Tamb=25 OC DC Current Gain at VCE=6V, IC=1mA Current Gain Group P F E U at VCE=6V, IC=0.1mA Collector Cutoff Current at VCB=120V Emitter Cutoff Current at VEB=5V Collector Cutoff Current at VCE=100V Gain Bandwidth Product at VCE=6V, IE=1mA Noise Voltage Output Capacitance at VCB=30V, f=1MHz Base Emitter Voltage at VCE=6V, IC=1mA Collector Saturation Voltage at IC=10mA, IB=1mA Symbol hFE hFE hFE hFE hFE ICBO IEBO ICEO fT NV COB VBE VCE(sat) Min. 200 300 400 600 150 - - - 50 - - 0.55 - Typ.