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ST 2SC4379U
NPN Silicon Epitaxial Planar Transistor
for power amplification applications
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current
Total Power Dissipation
Junction Temperature Storage Temperature Range
1) When mounted on a 250 mm2 X 0.8 t ceramic substrate.
Symbol VCBO VCEO VEBO IC IB
Ptot
Tj Tstg
Value
50
50
5
2
0.4 0.5 1 1) 150
- 55 to + 150
Unit V V V A A
W
OC OC
Characteristics at Ta = 25 OC Parameter
Symbol
DC Current Gain at VCE = 2 V, IC =0.5 A
at VCE = 2 V, IC = 1.
2SC4379U Datasheet
