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ST 2SC828 / 828A
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
These transistors are subdivided into three groups Q, R and S according to their DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25oC)
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Peak Collector Current Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol
VCBO VCEO VEBO ICM
IC Ptot Tj TS
Value ST 2SC828 ST 2SC828A
30 45 25 45
7 100 50 400 150 -55 to +150
G S P FORM A IS AVAILABLE
Unit
V V V mA mA mW OC OC
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.
2SC828 Datasheet
