Datasheet4U Logo Datasheet4U.com

2SD1303 - NPN Transistor

Key Features

  • ˙ High emitter-base voltage VEBO=7.5V(min).
  • ˙ High reverse hFE reverse hFE=20(min) (VCE=2V, IC=4mA) ˙ Low on resistance Ron=0.6Ω (Typ. ) (IB=1mA) TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25 oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS G S P FORM A IS.

📥 Download Datasheet

Datasheet Details

Part number 2SD1303
Manufacturer SEMTECH
File Size 464.47 KB
Description NPN Transistor
Datasheet download datasheet 2SD1303 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ST 2SD1303 NPN Silicon Epitaxial Planar Transistor for audio muting application. On special request, these transistors can be manufactured in different pin configurations. Features ˙ High emitter-base voltage VEBO=7.5V(min)* ˙ High reverse hFE reverse hFE=20(min) (VCE=2V, IC=4mA) ˙ Low on resistance Ron=0.6Ω (Typ.) (IB=1mA) TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25 oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS G S P FORM A IS AVAILABLE Value 25 16 7.5* 300 30 400 125 -55 to +125 Unit V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.