Semtech Corporation 2SD1303
NPN Transistor
| Part No. | 2SD1303 |
|---|---|
| Datasheet | 2SD1303 Download |
| Manufacturer |  Semtech Corporation |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
˙ High emitter-base voltage VEBO=7.5V(min)* ˙ High reverse hFE reverse hFE=20(min) (VCE=2V, IC=4mA) ˙ Low on resistance Ron=0.6Ω (Typ.) (IB=1mA) TO-92 Plastic Package Weight approx. 0.19gABSOLUTE MAXIMUM RATINGS
(T a = 25 oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS G S P FORM A IS AVAILABLE Value 25 16 7.5* 300 30 400 125 -55 to +125 Unit V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: ® ST 2SD1303 Characteristics at Tamb=25 oC DC Current Gain at VCE=2V, IC=4mA (for) at VCE=2V, IC=4mA (rev) Collector Cutoff Current at VCB=25V Emitter Cutoff Current at VEB=7.5V Collector Emitter Saturation Voltage at IC=100mA, IB=10mA Base Emitter Saturation Voltage at IC=100mA, IB=10mA Transition Frequency at VCE=10V, IE=1mA Collector Output Capacitance at VCB=10V, f=1MHz On Resistance at IB=1mA, f=1KHz, Vin=0.3V Symbol hFE hFE ICBO IEBO VCE(sat) VBE(sat) fT COB Ron Min.
