The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
ST 2SD1303
NPN Silicon Epitaxial Planar Transistor for audio muting application.
On special request, these transistors can be manufactured in different pin configurations.
Features
˙ High emitter-base voltage VEBO=7.5V(min)* ˙ High reverse hFE
reverse hFE=20(min) (VCE=2V, IC=4mA)
˙ Low on resistance
Ron=0.6Ω (Typ.) (IB=1mA)
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25 oC)
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC IB Ptot Tj TS
G S P FORM A IS AVAILABLE
Value 25 16 7.5* 300 30 400 125
-55 to +125
Unit V V V mA mA
mW OC OC
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.