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2SD1817Z Datasheet PDF

Semtech Corporation 2SD1817Z

NPN Silicon Transistor

Part No. 2SD1817Z
Datasheet 2SD1817Z Download
Manufacturer
Semtech Corporation
Description NPN Silicon Transistor
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2SD1817Z datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Collector Dissipation @ TC = 25 OC Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PC TJ Ts Value 80 60 6 3 6 1 15 150 - 55 to + 150 Unit V V V A A W O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 1 A at VCE = 2 V, IC = 2 A Collector Base Breakdown Voltage at IC = 1 mA Collector Emitter Breakdown Voltage at IC = 25 mA Collector Cutoff Current at VCB = 60 V Emitter Cutoff Current at VEB = 5 V Collector Emitter Saturation Voltage at IC = 2 A, IB = 4 mA Base Emitter Saturation Voltage at IC = 2 A, IB = 4 mA Symbol hFE hFE V(BR)CBO V(BR)CEO ICBO IEBO VCE(sat) VBE(sat) Min. 2000 1000 80 60 Max. 10 2.5 1.5 2 Unit V V µA mA V V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock E...
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