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2SD882S Datasheet PDF

Semtech Corporation 2SD882S

NPN Silicon Epitaxial Planar Transistor

Part No. 2SD882S
Datasheet 2SD882S Download
Manufacturer
Semtech Corporation
Description NPN Silicon Epitaxial Planar Transistor
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2SD882S datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25℃ Parameter DC Current Gain at VCE = 2 V, IC = 1 A Current Gain Group at VCE = 2 V, IC = 20 mA Collector Base Cutoff Current at VCB = 30 V Emitter Base Cutoff Current at VEB = 3 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 2 A, IB = 200 mA Base Emitter Saturation Voltage at IC = 2 A, IB = 200 mA Trans