Semtech Corporation 2SK1118
N-Channel MOSFET
| Part No. | 2SK1118 |
|---|---|
| Datasheet | 2SK1118 Download |
| Manufacturer |  Semtech Corporation |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Power Dissipation (Tc = 25℃) Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Junction Temperature Storage Temperature Range TO-220 Plastic Package Symbol VCBO VCEO VEBO IC ICP Ptot RθJA RθJC Tj Tstg Value 600 600 ± 30 6 24 45 62.5 2.77 150 - 55 to + 150 Unit V V V A A W ℃/W ℃/W ℃ ℃ SEMTECH ELECTRONICS LTD. ® Dated : 04/01/2016 Rev:01 2SK1118ELECTRICAL CHARACTERISTICS
at Ta = 25℃ Parameter Drain-Source Breakdown Voltage at ID = 10 mA Drain-Source Leakage Current at VDS = 600 V Gate-Source Leakage Current at VGS = ± 25 V Gate-Source Threshold Voltage at VDS = 10 V, ID = 1 mA Drain-Source On-State Resistance at VGS = 10 V, ID = 3 A Forward Transconductance at VDS = 10 V, ID = 3 A Input Capacitance at VDS = 10 V, f = 1 MHz Output Capacitance at VDS = 10 V, f = 1 MHz Reverse Transfer Capacitance at VDS = 1...
