Semtech Corporation BA592WS
SILICON RF SWITCHING DIODE
FEATURES
● Very low forward resistance● Small capacitance PINNING PIN 1 2
DESCRIPTION
Cathode Anode 2APPLICATIONS
● For band switching in TV/VTR tuners and mobile applications 1 W4 Top View Marking Code: "W4" Simplified outline SOD-323 and symbolABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Diode Reverse Voltage Forward Current Junction Temperature Operating Temperature Range Storage Temperature Range Symbol VR IF TJ Top Tstg Value 35 100 150 - 55 to + 125 - 55 to + 150 Unit V mA O C C C O OELECTRICAL CHARACTERISTICS
at Ta = 25 OC Parameter Reverse Current at VR = 20 V Forward Voltage at IF = 100 mA Diode Capacitance at VR = 1 V, f = 1 MHz at VR = 3 V, f = 1 MHz Reverse Parallel Resistance at VR = 0 V, f = 100 MHz Forward Resistance at IF = 3 mA, f = 100 MHz at IF = 10 mA, f = 100 MHz Series Inductance Symbol IR VF CT RP rf Ls Min. 0.65 0.6 Typ. 100 Max. 20 1 1.4 1.1 Unit nA V pF KΩ - 1.8 0.7 0.5 - Ω nH SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Li...