Semtech Corporation BC368
NPN Silicon Epitaxial Planar Transistor
APPLICATIONS
● General purpose switching and amplification● Power applications such as audio output stages
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 5 mA at VCE = 1 V, IC = 500 mA at VCE = 1 V, IC = 1 A Collector Base Cutoff Current at VCB = 25 V Emitter Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 1 A, IB = 100 mA Base Emitter On Voltage at VCE = 1 V, IC = 1 A Gain Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 20 MHz 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Symbol VCBO VCEO VEB