BCW68H
BCW68
PNP Silicon Epitaxial Planar Transistor for high current application
The transistor is subdivided into three groups F, G and H according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Peak Base Current Power Dissipation Junction Temperature Storage Temperature Range
SOT-23 Plastic Package
Symbol
-VCBO -VCEO -VEBO
-IC -ICM -IB -IBM Ptot Tj TS
Value 60 45 5 800 1 100 200 200 150
- 55 to + 150
Unit V V V m A A m A m A m W OC OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/03/2007
BCW68
Characteristics at Ta = 25 OC Parameter
DC Current Gain at -VCE = 10 V, -IC = 100 µA at -VCE = 1 V, -IC = 10 m A at -VCE = 1 V, -IC = 100 m A at -VCE = 2 V, -IC = 500 m A
Collector Cutoff Current at -VCB = 45 V Emitter Cutoff Current at -VEB...
