BZT55B62 Datasheet PDF - SEMTECH SILICON EPITAXIAL PLANAR ZENER DIODES Specs

BZT55B62 - SILICON EPITAXIAL PLANAR ZENER DIODES

This page provides the datasheet information for the BZT55B62, a member of the BZT55C2V4 SILICON EPITAXIAL PLANAR ZENER DIODES family.

Datasheet Summary

Features

Very sharp reverse characteristic.
Low reverse current level.
Available with tighter tolerances.
Very high stability.
Low noise LS-34.

Datasheet Details

Part number	BZT55B62
Manufacturer	SEMTECH
File Size	308.59 KB
Description	SILICON EPITAXIAL PLANAR ZENER DIODES
Datasheet	BZT55B62 Datasheet
Additional preview pages of the BZT55B62 datasheet.

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Full PDF Text Transcription

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BZT55 Series SILICON EPITAXIAL PLANAR ZENER DIODES Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise LS-34 Applications • Voltage stabilization QuadroMELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Z-Current Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air On PC board 50 mm X 50 mm X 1.6 mm Forward Voltage at IF = 100 mA Symbol Ptot IZ Tj TS Value 500 Ptot / VZ 175 - 65 to + 175 Unit mW mA OC OC Symbol RthJA VF Max. 500 1.5 Unit K/W V SEMTECH ELECTRONICS LTD.

Published: Apr 27, 2016 |