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BZT55B6V2 - SILICON EPITAXIAL PLANAR ZENER DIODES

This page provides the datasheet information for the BZT55B6V2, a member of the BZT55C2V4 SILICON EPITAXIAL PLANAR ZENER DIODES family.

Datasheet Summary

Features

  • Very sharp reverse characteristic.
  • Low reverse current level.
  • Available with tighter tolerances.
  • Very high stability.
  • Low noise LS-34.

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Datasheet preview – BZT55B6V2

Datasheet Details

Part number BZT55B6V2
Manufacturer SEMTECH
File Size 308.59 KB
Description SILICON EPITAXIAL PLANAR ZENER DIODES
Datasheet download datasheet BZT55B6V2 Datasheet
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Full PDF Text Transcription

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BZT55 Series SILICON EPITAXIAL PLANAR ZENER DIODES Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise LS-34 Applications • Voltage stabilization QuadroMELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Z-Current Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air On PC board 50 mm X 50 mm X 1.6 mm Forward Voltage at IF = 100 mA Symbol Ptot IZ Tj TS Value 500 Ptot / VZ 175 - 65 to + 175 Unit mW mA OC OC Symbol RthJA VF Max. 500 1.5 Unit K/W V SEMTECH ELECTRONICS LTD.
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