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HZ2B3 - SILICON EPITAXIAL PLANER ZENER DIODES

This page provides the datasheet information for the HZ2B3, a member of the HZ2A1 SILICON EPITAXIAL PLANER ZENER DIODES family.

Features

  • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc.
  • Wide spectrum from 1.6V through 38V of zener voltage provide flexible.

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Datasheet Details

Part number HZ2B3
Manufacturer SEMTECH
File Size 444.44 KB
Description SILICON EPITAXIAL PLANER ZENER DIODES
Datasheet download datasheet HZ2B3 Datasheet
Additional preview pages of the HZ2B3 datasheet.

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Other Datasheets by SEMTECH
  • HZ2B1 - SILICON EPITAXIAL PLANER ZENER DIODES
  • HZ2B2 - SILICON EPITAXIAL PLANER ZENER DIODES
  • HZ20-1 - SILICON EPITAXIAL PLANER ZENER DIODES
  • HZ20-2 - SILICON EPITAXIAL PLANER ZENER DIODES
  • HZ20-3 - SILICON EPITAXIAL PLANER ZENER DIODES
  • HZ22-1 - SILICON EPITAXIAL PLANER ZENER DIODES
  • HZ22-2 - SILICON EPITAXIAL PLANER ZENER DIODES
  • HZ22-3 - SILICON EPITAXIAL PLANER ZENER DIODES

Full PDF Text Transcription

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HZ Series SILICON EPITAXIAL PLANER ZENER DIODES FOR STABILIZED POWER SUPPLY Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. Absolute Maximum Ratings (Ta=25 oC) Power Dissipation Junction Temperature Storage Temperature Range Symbol Ptot Tj TS Value 500 175 -55 to +175 Unit mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: www.rct.
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