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HZ4A1 - SILICON EPITAXIAL PLANER ZENER DIODES

Key Features

  • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc.
  • Wide spectrum from 1.6V through 38V of zener voltage provide flexible.

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Datasheet Details

Part number HZ4A1
Manufacturer SEMTECH
File Size 438.99 KB
Description SILICON EPITAXIAL PLANER ZENER DIODES
Datasheet download datasheet HZ4A1 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HZ Series SILICON EPITAXIAL PLANER ZENER DIODES FOR STABILIZED POWER SUPPLY Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application. Absolute Maximum Ratings (Ta=25 oC) Power Dissipation Junction Temperature Storage Temperature Range Symbol Ptot Tj TS Value 500 175 -55 to +175 Unit mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: www.rct.