Semtech Corporation KSB564
PNP Silicon Epitaxial Planar Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 30 25 5 800 625 150 -55 to +150 Unit V V V mA mW OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST KSB564 Characteristics at Tamb=25 OC Symbol DC Current Gain at -VCE=1V, -IC=100mA Current Gain Group O Y G hFE hFE hFE Collector Emitter Breakdown Voltage at -IC=10mA Collector Base Breakdown Voltage at -IC=100μA Emitter Base Breakdown Voltage at -IE=100μA Collector Cutoff Current at -VCB=30V Collector Saturation Voltage at -IC=500mA, -IB=50mA Base Saturation Voltage at -IC=500mA, -IB=50mA Collector Output Capacitance at -VCB=6V, f=1MHz Transition Frequency at -VCE=6V, -IC=10mA -V(BR)CEO -V(BR)CBO -V(BR)EBO -ICBO -VCE(sat) -VBE(sat) COB fT Min.