Semtech Corporation LL4151
Silicon Epitaxial Planar Switching Diode
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Maximum Repetitive Reverse Voltage Reverse Voltage Average Forward Current Forward Current Repetitive Peak Forward Current Peak Forward Surge Current (tp = 1 µs) Power Dissipation Operating Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Breakdown Voltage at IR = 5 μA Forward Voltage at IF = 50 mA Reverse Current at VR = 50 V at VR = 50 V, Tj = 150 OC Total Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = 10 mA, VR = 6 V, RL = 100 Ω, iR = 0.1 x IR Reverse Recovery Time at IF = IR = 10 mA, iR = 1 mA Symbol VRRM VR IF(AV) IF IFRM IFSM Ptot Tj Tstg Value 75 50 150 300 500 2 500 175 - 65 to + 175 Unit V V mA mA mA A mW OC OC Symbol Min. Max. Unit V(BR) 75 - V VF - 1 V IR - 50 nA IR - 50 μA CT - 2 pF trr1 - 2 ns trr2 - 4 ns ® Dated : 15/06/2009 LL4151 ® Dated : 15/06/2009