The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
LL4153
Silicon Epitaxial Planar Switching Diode
Applications • High-speed switching
LL-34
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Symbol
Value
Unit
Maximum Repetitive Reverse Voltage
VRRM
75
V
Average Rectified Forward Current
IF(AV)
200
mA
Non-repetitive Peak Forward Surge Current
t=1s t = 1 µs
IFSM
1 4
A
Power Dissipation
Ptot
500
mW
Operating Junction Temperature
Tj
175
OC
Storage Temperature Range
Tstg
- 65 to + 175
OC
Characteristics at Ta = 25 OC
Parameter
Reverse Breakdown Voltage at IR = 5 μA
Forward Voltage at IF = 0.1 mA at IF = 0.
LL4153 Datasheet
