LS4448
Silicon Epitaxial Planar Switching Diode
Fast switching diode in Quadro MELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448.
LS-34
Quadro MELF Dimensions in mm
Absolute Maximum Ratings (Ta = 25℃) Parameter
Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current
HSurge Forward Current at t < 1 s
Power Dissipation
CJunction Temperature
Storage Temperature Range
E1) Valid provided that electrodes are kept at ambient temperature.
Symbol VRM VR IF(AV) IFSM Ptot Tj Tstg
Value 100 75 150 500 500 1) 175
- 65 to + 175
Unit V V m A m A m W
℃ ℃
TCharacteristics at Ta = 25℃ Parameter MForward Voltage at IF = 5 m A at IF = 100 m A EReverse Current at VR = 20 V Sat VR= 75 V
Symbol VF
Min.
- -
Max.
0.72 1
25 5
Unit V n A µA
Reverse Breakdown Voltage tested with 100 µA Pulses
V(BR)R
- V
Capacitance at VR = 0, f = 1 MHz
Ctot
- 4 p F
Reverse Recovery Time at IF = 10 m A to IR = 1 m A, VR = 6 V,...
