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MCL352 - Silicon Epitaxial Planar Switching Diode

Key Features

  • Small package.
  • Low forward voltage.
  • Fast reverse recovery time.
  • Small total capacitance Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Maximum Peak Forward Current Surge Forward Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 30 V at VR = 80 V Diode Capac.

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Datasheet Details

Part number MCL352
Manufacturer SEMTECH
File Size 256.74 KB
Description Silicon Epitaxial Planar Switching Diode
Datasheet download datasheet MCL352 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MCL352 Silicon Epitaxial Planar Switching Diode Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Maximum Peak Forward Current Surge Forward Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 30 V at VR = 80 V Diode Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = 10 mA Cathode indification LS-31 Glass Case MicroMELF Symbol Value Unit VRM VR IF(AV) IFM IFSM Ptot Tj Tstg 85 80 100 200 1 200 150 - 55 to + 150 V V mA mA A mW OC OC Symbol VF IR Ctot trr 1.35 MGalaxs.