Semtech Corporation MMBD217SEW
SILICON EPITAXIAL PLANAR SWITCHING DIODE
| Part No. | MMBD217SEW |
|---|---|
| Datasheet | MMBD217SEW Download |
| Manufacturer |  Semtech Corporation |
| Description | SILICON EPITAXIAL PLANAR SWITCHING DIODE |
| Buy | Stock & Price |
APPLICATIONS
● Ultra high speed switching 1 2 Marking Code: A7ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Symbol VRM VR IO IFM IFSM Pd TJ Ts Value 80 80 100 300 4 200 150 - 55 to + 150 Unit V V mA mA A mW O Reverse Voltage Average Rectified Forward Current (Single) Maximum (Peak) Forward Current (Single) Peak Forward Surge Current (tp = 1 µs) Power Dissipation Junction Temperature Storage Temperature Range C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 70 V Capacitance between Terminals at VR = 6, f = 1 MHz Reverse Recovery Time at IF = 5 mA, VR = 6 V, RL = 50 Ω Symbol VF IR CT trr Max. 1.2 0.1 3.5 4 Unit V µA pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 10/10/2008 MMBD217SEW SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on th...