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MMBD6050
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance
Applications • Ultra high speed switching application
3
12
Marking Code: 5D SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Reverse Voltage Forward Current Peak Forward Surge Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol
VR IF IFSM Pd Tj Ts
Value 70 200 500 300 150
- 55 to + 150
Unit V mA mA
mW OC OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage at IF = 1 mA at IF = 100 mA
Reverse Current at VR = 50 V Reverse Breakdown Voltage at IR = 100 µA Diode Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, IR(REC) = 1 mA
Symbol VF
IR V(BR)R
CT trr
M
MMBD6050 Datasheet
