Semtech Corporation MMBTSD2114
NPN Transistor
| Part No. | MMBTSD2114 |
|---|---|
| Datasheet | MMBTSD2114 Download |
| Manufacturer |  Semtech Corporation |
| Description | NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range 1) Single pulse, Pw = 100 ms TO-236 Plastic Package Symbol VCBO VCEO VEBO IC ICP Ptot Tj Tstg Value 25 20 12 0.5 1 1) 200 150 - 55 to + 150 Unit V V V A mW OC OC Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 3 V, IC = 100 mA Current Gain Group V hFE 820 - 1800 - W 1200 - 2700 Collector Base Cutoff Current at VCB = 20 V ICBO - - 500 nA Emitter Base Cutoff Current at VEB = 10 V IEBO - - 500 nA Collector Base Breakdown Voltage at IC = 10 µA V(BR)CBO 25 - - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 20 - - V Emitter Base Breakdown Voltage at IE = 10 µA V(BR)EBO 12 - - V Collector Emitter Saturation Voltage at IC = 500 mA, IB = 20 mA VCE(sat) - - 400 mV Transition Frequency at VCE = 10 V, -IE = 50 mA, f = 100 MHz fT - 350 - MHz Output Capacitance at VCB = 10 V, IE = 0 A, f = 1 MHz Cob - 8 - pF SEMTECH ELECTRONICS LTD. ® Dated：16/04/2015 Rev：01 MMBTSD2114 SEMTECH ELECTRONICS LTD.