MPSA64 Datasheet | SEMTECH

MPSA63 / 64 PNP Silicon Epitaxial Planar Transistor Darlington Transistor for high gain amplification Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 10 m A at -VCE = 5 V, -IC = 100 m A Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 10 V Collector Emitter Breakdown Voltage at -IC = 100 µA Collector Emitter Saturation Voltage at -IC = 100 m A, -IB = 100 µA Base Emitter On Voltage at -VCE = 5 V, -IC = 100 m A Transition Frequency at -VCE = 5 V, IE = 10 m A 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Weight approx. 0.19g Symbol -VCBO -VCES -VEBO -IC Ptot Tj TS Value 30 30 10 500 625 150 - 55 to + 150 Unit V V V m A m W OC OC MPSA63 MPSA64 MPSA63 MPSA64 Symbol h FE h FE h FE h FE -ICBO -IEBO -V(BR)CES -VCE(sat) VBE(on) f...