Semtech Corporation RB161L-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
| Part No. | RB161L-40 |
|---|---|
| Datasheet | RB161L-40 Download |
| Manufacturer |  Semtech Corporation |
| Description | SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE |
| Buy | Stock & Price |
FEATURES
● Compact power mold type● Ultra low VF
● VRM = 40 V guaranteed
MAXIMUM RATINGS
andELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified. Single phase, half wave, resistive or inductive load, For capacitive load, derate by 20% Parameter Symbol VRM VR Value 40 20 1 70 0.4 1 125 - 40 to + 125 Unit V V A A V mA O Peak Reverse Voltage DC Blocking Voltage Mean Rectifying Current 1) IO IFSM VF IR TJ TS Peak Forward Surge Current Maximum Forward Voltage at IF = 1 A Maximum Reverse Current at VR = 20V Operating Junction Temperature Range Storage Temperature Range 1) C C O When mounting on PCB SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 14/04/2008 Datasheet pdf - RB161L-40 10 100m Ta=125 C 10m 1 Forward Current: I F (A) Reverse Current: I R (A) 1m 75 C 100m Ta =1 25 C C 10m -25 C 75 25 C 100 25 C 10 -25 C 1 1m 0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40 50 Forward Voltage: VF (V) Fig.