Semtech Corporation RB520S-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
| Part No. | RB520S-30 |
|---|---|
| Datasheet | RB520S-30 Download |
| Manufacturer |  Semtech Corporation |
| Description | SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE |
| Buy | Stock & Price |
FEATURES
● Extremely small surface mounting type● High reliability PINNING PIN 1 2 1
DESCRIPTION
Cathode Anode 2 B Top View Marking Code: "B" Simplified outline SOD-523 and symbolABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 200 mA Reverse Current at VR = 10 V Note: ESD sensitive product handling required. Symbol VR IO IFSM Tj Ts Value 30 200 1 125 - 40 to + 125 Unit V mA A OC OC Symbol VF IR Max. 0.6 1 Unit V µA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 RB520S-30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 A C RB520S-30 PACKAGE OUTLINE Pl...
