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RB520S-30 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

General Description

Cathode Anode 2 B Top View Marking Code: "B" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Para

Key Features

  • Extremely small surface mounting type.
  • High reliability.

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Datasheet Details

Part number RB520S-30
Manufacturer SEMTECH
File Size 236.78 KB
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Datasheet download datasheet RB520S-30 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RB520S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low current rectification and high speed switching applications Features • Extremely small surface mounting type • High reliability PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 B Top View Marking Code: "B" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 200 mA Reverse Current at VR = 10 V Note: ESD sensitive product handling required. Symbol VR IO IFSM Tj Ts Value 30 200 1 125 - 40 to + 125 Unit V mA A OC OC Symbol VF IR Max. 0.6 1 Unit V µA SEMTECH ELECTRONICS LTD.