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RB551V-30 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

General Description

Cathode Anode 12 SA Top View Marking Code: "SA" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Charac

Key Features

  • Small surface mounting type.
  • Ultra low VF.
  • High reliability.

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Datasheet Details

Part number RB551V-30
Manufacturer SEMTECH
File Size 163.89 KB
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Datasheet download datasheet RB551V-30 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RB551V-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • Ultra low VF • High reliability Applications • High frequency rectification switching regulation PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 SA Top View Marking Code: "SA" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA at IF = 500 mA Reverse Current at VR = 20 V Note: ESD sensitive product handling required. Symbol VRM VR IO IFSM Tj Ts Value 30 20 0.5 2 125 - 40 to + 125 Unit V V A A OC OC Symbol VF IR Max. 0.36 0.