Semtech Corporation RB551V-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
| Part No. | RB551V-30 |
|---|---|
| Datasheet | RB551V-30 Download |
| Manufacturer |  Semtech Corporation |
| Description | SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE |
| Buy | Stock & Price |
FEATURES
● Small surface mounting type● Ultra low VF
● High reliability
APPLICATIONS
● High frequency rectification switching regulation PINNING PIN 1 2DESCRIPTION
Cathode Anode 12 SA Top View Marking Code: "SA" Simplified outline SOD-323 and symbolABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA at IF = 500 mA Reverse Current at VR = 20 V Note: ESD sensitive product handling required. Symbol VRM VR IO IFSM Tj Ts Value 30 20 0.5 2 125 - 40 to + 125 Unit V V A A OC OC Symbol VF IR Max. 0.36 0.47 100 Unit V µA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 RB551V-30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Lim...
