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RB751S-40 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

General Description

Cathode Anode 2 D Top View Marking Code: "D" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz, 1 Cycle) Junction Temperature Storage Temperature Range Characteristics

Key Features

  • Small surface mounting type.
  • Low reverse current and low forward voltage.
  • High reliability.

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Datasheet Details

Part number RB751S-40
Manufacturer SEMTECH
File Size 214.56 KB
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Datasheet download datasheet RB751S-40 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RB751S-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for high speed switching and detection applications Features • Small surface mounting type • Low reverse current and low forward voltage • High reliability PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 D Top View Marking Code: "D" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz, 1 Cycle) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA Reverse Current at VR = 30 V Capacitance Between Terminals at VR = 1 V, f = 1 MHz Note: ESD sensitive product handling required.