DESCRIPTION
Each driver is capable of Ultrafast rise/fall times as well as a 20ns max propagation delay from input transition to the gate of the power .ETs. An internal Overlap Protection circuit prevents shootthrough from Vin to GND in the main and synchronous MOS.ETs. Higher gate voltage drive capability of 8V (top and bottom) optimally reduces Rds_on of power MOS.ETs without excessive driver and .ET switching losses. The high current drive capability (5A peak) allows fast switching, thus reducing switching losses at high (up to 1MHz) frequencies without causing thermal stress on the driver. The high voltage CMOS process allows operation from 518 Volts at top MOS.ET drain, thus making SC1205H suitable for battery powered applications. Connecting Enable pin (EN) to logic low shuts down both drives and reduces operating current to less than 10µA. An under-voltage-lock-out and overtemperature shutdown feature is included to guarantee proper and safe operation. The SC1205H is offered in a standard SO-8 package.
Semtech Corporation
