APPLICATIONS
POWER MANAGEMENT DESCRIPTION
It provides the following advantages: - No costly precision sensing resistor - Lossless current sensing - High level noise free signal - Fast response - Suitable for wide range of duty cycle - Only two small signal components (third optional) The detailed explanation of the technique can be found in the APPLICATIONS
Information section. A 30ns max propagation delay from input transition to the gate of the power FET’s guarantees operation at high switching frequencies. Internal overlap protection circuit prevents shoot-through from Vin to PGND in the main and synchronous MOSFETs. The adaptive overlap protection circuit ensures the bottom FET does not turn on until the top FET source has reached 1V, to prevent crossconduction. High current drive capability allows fast switching, thus reducing switching losses at high (up to 1.5MHz) frequencies without causing thermal stress on the driver. Under-voltage-lockout and over-temperature shutdown features are included for proper and safe operation.
Semtech Corporation
