Semtech Corporation ST8550
1.5A PNP Silicon Epitaxial Planar Transistor
| Part No. | ST8550 |
|---|---|
| Datasheet | ST8550 Download |
| Manufacturer |  Semtech Corporation |
| Description | 1.5A PNP Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(T a = 25oC) Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCEO -VCBO -VEBO -IC -ICM -IB Ptot Tj TS G S P FORM A IS AVAILABLE Value 25 40 6 1 1.5 100 1 150 -55 to +150 Unit V V V A A mA W OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: ® ST 8550 (1.5A) Characteristics at Tamb=25 OC DC Current Gain at -VCE=1V, -IC=5mA at -VCE=1V, -IC=100mA at VCE=1V, IC=800mA Collector Cutoff Current at -VCB=35V Emitter Cutoff Current at -VBE=6V Collector Saturation Voltage at -IC=800mA, -IB=80mA Base Saturation Voltage at -IC=800mA, -IB=80mA Collector Emitter Breakdown Voltage at -IC=2mA Collector Base Breakdown Voltage at -IC=100µA Emitter Base Breakdown Voltage at -IE=100µA Base Emitter Voltage at -IC=10mA, -VCE=1V Gain Bandwidth Product at -VCE=10V, -IC=50mA Collector Base Capacitance at -VCB=10V, f=1MHz Symbol 8550C 8550D hFE hFE hFE hFE -ICBO -IEBO -VCE(sat) -VBE(sat) -V(BR)CEO -V(BR)CBO -V(BR)EBO -VBE fT COB Min.