MMBTSA1235
MMBTSA1235 is NPN Transistor manufactured by SEMTECH.
PNP Silicon Epitaxial Planar Transistor for low frequency amplification applications
The transistor is subdivided into two groups E and F, according to its DC current gain.
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SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 6 V, -IC = 1 m A Current Gain Group at -VCE = 6 V, -IC = 0.1 m A Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 100 µA Emitter Base Breakdown Voltage at -IC = 100 µA Collector Cutoff Current at -VCB = 60 V Emitter Cutoff Current at -VEB = 6 V Collector Emitter Saturation Voltage at -IC = 100 m A, -IB = 10 m A Base Emitter Saturation Voltage at -IC = 100 m A, -IB = 10 m A Gain Bandwidth Product at -VCE = 6 V, -IC = 10 m A Collector Output Capacitance at -VCB = 6 V, f = 1 MHz Noise Figure at -VCE = 6 V, IE= 0.3 m A, f = 100 Hz, RG = 10 KΩ Symbol E F h FE h FE h FE -V(BR)CBO -V(BR)CEO -V(BR)EBO -ICBO -IEBO -VCE(sat) -VBE(sat) f T Cob NF Min. 150 250 90 60 50 6 Typ. 200 4 Max. 300 500 0.1 0.1 0.3 1 20 Unit V V V µA µA V V MHz p F d B Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 60 50 6 200 200 150
- 55 to + 150 Unit V V V m A m W
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 05/08/2006
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Power Dissipation vs Ambient Temperature
Power Dissipation: Ptot (m W)
50 0 0 25 50 75 100
Ambient Temperature: Ta ( C)
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated :...