MMBTSB1689W
MMBTSB1689W is NPN Transistor manufactured by SEMTECH.
PNP Silicon Epitaxial Planar Transistors for low frequency amplifier and driver applications
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Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
1)
Symbol -VCBO -VCEO -VEBO -IC -ICP Ptot TJ Ts
Value 15 12 6 1.5 3
1)
Unit V V V A A m W
200 150 -55 to +150
Single pulse, Pw = 1 ms.
Characteristics at Tamb = 25 OC Parameter DC Current Gain at -VCE = 2 V, -IC = 200 m A Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 1 m A Emitter Base Breakdown Voltage at -IE= 10 µA Collector Emitter Saturation Voltage at -IC = 500 m A, -IB = 25 m A Collector Cutoff Current at -VCB = 15 V Emitter Cutoff Current at -VEB = 6 V Transition Frequency at -VCE = 2 V, IE = 200 m A, f = 100 MHz Collector Output Capacitance at -VCB = 10 V, f = 1 MHz Symbol h FE -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCEsat -ICBO -IEBO f T Cob Min. 270 15 12 6 Typ. 400 12 Max. 680 0.2 100 100 Unit V V V V n A n A MHz p F
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/01/2006
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SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated :...
