MMBTSB815
MMBTSB815 is NPN Transistor manufactured by SEMTECH.
PNP Silicon Epitaxial Planar Transistor for general purpose AF amplifier
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SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO -IC -ICP Ptot Tj TS
Value 20 15 5 700 1.5 200 150
- 55 to + 150
Unit V V V m A A m W
Characteristics at Ta = 25 OC
Parameter DC Current Gain at -VCE = 2 V, -IC = 50 m A at -VCE = 2 V, -IC = 500 m A Collector Cutoff Current at -VCB = 15 V Emitter Cutoff Current at -VEB = 4 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 100 µA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 5 m A, -IB = 0.5 m A Collector Emitter Saturation Voltage at -IC = 100 m A, -IB = 10 m A Transition Frequency at -VCE = 10 V, -IC = 50 m A Output Capacitance at -VCB = 10 V, f = 1 MHz Symbol h FE h FE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VCE(sat) f T Cob Min. 200 80 20 15 5 Typ. 250 13 Max. 400 100 100 35 120 Unit n A n A V V V m V m V MHz p F
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
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Dated : 18/07/2007
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SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated :...