• Part: SDS160EWT
  • Description: SILICON EPITAXIAL PLANAR SWITCHING DIODE
  • Category: Diode
  • Manufacturer: SEMTECH
  • Size: 347.25 KB
Download SDS160EWT Datasheet PDF
SEMTECH
SDS160EWT
SDS160EWT is SILICON EPITAXIAL PLANAR SWITCHING DIODE manufactured by SEMTECH.
Features - Fast reverse recovery time - Small total capacitance - Low forward voltage DESCRIPTION Cathode Anode A Top View Marking Code: "A" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Forward Current Peak Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Symbol VRM VR IO IFM IFSM PD TJ Tstg Value 85 80 100 300 2 150 150 - 55 to + 150 Unit V V m A m A A m W Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 m A Reverse Current at VR = 80 V Total Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at Irr = 0.1 X IR, IF = IR = 10 m A, RL = 100 Ω Symbol VF IR CT trr Max. 1.2 0.5 3 4 Unit V µA p F ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009 .. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009 .. PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 ∠ ALL ROUND E bp UNIT...